Author Archives: Walt

Metamaterials are usually identified by indicating it is a constructed material that has characteristics not observed in nature.  While typically referring to nanoscale materials, there are metamaterials that are on the millimeter scale.  (That will be covered in a future … Continue reading →

An excellent example of how metamaterials work comes from Stanford University [Ref. 1].  The concept can be described as creating nanoscale antenna to affect the performance of electromagnetic spectrum waves.  Over a half century ago, TVs had external metal antenna.  … Continue reading →

In many cases semiconductor industry leads the application of technology shrinkage.  Each “generation” of new devices employs smaller and smaller dimensional structures in the circuitry.  There is work being done on qualifying the processes for the 3nm and 2nm generation.  … Continue reading →

Moore’s Law is quoted in many different forms.  Basically, area density is a primary focus.  If the difference between generations in a 30% reduction in dimensions, then the area for a transistor (70% by 70%) is reduced by almost 50% … Continue reading →

There has been more information in the press about the coming 3nm generation of semiconductors.  [Note: I am on the semiconductor roadmap Litho subcommittee. Only information in the public domain will be covered in any of these blogs.) As pointed … Continue reading →

As 2022 begins, predicting (guessing) where technology will go is almost always wrong.  This is an opportunity to highlight some of the developments that that appear possible to occur. Nanomaterials: Nanomaterials have been around for more than a couple of … Continue reading →

We already reported on the development of two-dimensional nano-sheet transistors and other two-dimensional materials.  One of the challenges that has been previously mentioned is the fact that we do not know the material properties of “pure” materials.  Current technology provides … Continue reading →

Previously, we have covered the challenges of experiments and the need for reproducibility.  Recently, there has been an additional occurrence that merits discussion.  There has been a study where roughly 100 peer reviewed articles that were published in respectable journals … Continue reading →

In previous blogs, two dimensional semiconductors have been discussed.  Work at Singapore University of Technology and Design has developed a different approach to solving the issues of very small transistors that will be required for future generations of semiconductors [Ref. … Continue reading →